PROJECT RESOURCE LIBRARY
Project Resource Library

Project Introduction

Silicon carbide substrate material project

Huangling High tech Industrial Development Zone (Industrial Park) Management Committee

Huangling High tech Industrial Development Zone (Industrial Park) Management Committee

2025-05-11

55 Share

Funding Requirements

3.4 billion yuan

Project Details

Use Of Funds
The project site is located in Huangling County Industrial Economic Industrial Park, with a total area of about 150 mu. The project is divided into three phases, of which, 30 SiC crystal production lines are planned to be built in the first phase, mainly producing 6-inch SiC single crystal chips, with a planned investment of 100 million yuan; Phase II plans to build SiC powder preparation production line, 100 SiC long crystal furnace equipment production line, SiC crystal production line, and wafer processing (cutting, grinding, polishing, washing) production line, carry out the production and preparation of 6-inch SiC single crystal crystal and wafer, SiC graphite composite materials, etc., with a planned investment of 800 million yuan; In the third phase, SiC powder preparation production line, 500 SiC long crystal furnace equipment production line, other supporting facilities and equipment are planned to be expanded synchronously, 6 inch and 8 inch SiC single crystal crystal and wafer production and preparation, SiC graphite composite materials, etc., with a planned investment of 2.5 billion yuan.
Return Analysis
The project is a downstream project of the silicon carbide new material industrial park. According to the progress of the silicon carbide project, the layout of related industrial land.
Contact Information

Contact: Lan Minfeng

Phone: 13571109991

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